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NOT RECOMMENDED FOR NEW DESIGN
USE DMG3402L
DMN3052L
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
BV DSS
I DSS
I GSS
30
?
?
?
?
?
?
1
? 80
? 800
V
? A
nA
V GS = 0V, I D = 250 ? A
V DS = 30V, V GS = 0V
V GS = ±12V, V DS = 0V
V GS = ±19V, V DS = 0V
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Static Drain-Source On-Resistance
V GS(th)
R DS (ON)
0.62
??
??
??
0.9
26
33
52
1.2
32
42
64
V
m ?
V DS = V GS , I D = 250 ? A
V GS = 10V, I D = 5.8A
V GS = 4.5V, I D = 5.0A
V GS = 2.5V, I D = 3.8A
?
78
100
V GS = 2.0V, I D = 2.0A
Forward Transconductance
Source-Drain Diode Forward Voltage
|Y fs |
V SD
?
?
8
0.75
?
1.2
S
V
V DS = 5V, I D = 3.1A
V GS = 0V, I S = 2.0A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
C iss
C oss
C rss
Q g
Q gs
Q gd
?
?
?
??
??
??
555
109
82
6.3
1.3
1.7
?
?
?
??
??
??
pF
pF
pF
nC
V DS = 5V, V GS = 0V
f = 1.0MHz
V GS = 4.5V, V DS = 15V,
I D = 5.8A
Notes:
4. Short duration pulse test used to minimize self-heating effect.
20
16
V GS = 10V
V GS = 4.0V
V GS = 3.0V
20
16
V DS = 5V
Pulsed
T A = -55°C
T A = 25°C
T A = 85°C
12
8
4
V GS = 2.5V
V GS = 2.0V
12
8
4
T A = 125°C
T A = 150°C
0
0
0.5
1
V GS = 1.5V
1.5 2 2.5 3 3.5 4 4.5 5
0
0
0.5 1 1.5 2 2.5 3 3.5
4
V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
V GS , GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
DMN3052L
Document number: DS31406 Rev. 5 - 3
2 of 6
www.diodes.com
December 2013
? Diodes Incorporated
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